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(R)
ST1802HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s
NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS
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APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TV DESCRIPTION The device is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature Value 1500 600 7 8 15 4 50 -65 to 150 150 Uni t V V V A A A W
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C C
May 1999
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THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CEO(sus) V CE(sat ) V BE(s at) h F E Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 7 V I C = 100 mA IC = 4 A IC = 4 A I C = 4.5 A IC = 1 A IC = 5 A IC = 4 A L B = 5 H f = 16 KHz L = 25 mH IB = 0.8 A IB = 1.2 A IB = 1 A V CE = 5 V V CE = 5 V IBON(END) =1 A V BB = -2.5 V 25 4 5 0.3 9 6 0.5 s s 600 5 1.5 1.2 T j = 125 C
o
Min.
Typ .
Max. 1 2 1
Un it mA mA mA V V V
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Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
Thermal Impedance
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Derating Curve Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
DC Current Gain
Power Losses At 16 KHz
Switching Time Inductive Load
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Reverse Biased SOA
Inductive Load Switching Test Circuits.
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ISOWATT218 MECHANICAL DATA
DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D
P025C
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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